@InProceedings{Tovpeko_etal2019,
author="Tovpeko, N. A.
and Trifonov, A. V.
and Semenov, A. V.
and Antipov, S. V.
and Kaurova, N. S.
and Titova, N. A.
and Goltsman, G. N.",
title="Bandwidth performance of a THz normal metal TiN bolometer-mixer",
booktitle="Proc. 30$^{th}$ Int. Symp. Space Terahertz Technol.",
year="2019",
pages="102--103",
optkeywords="TiN normal metal bolometer; NMB",
abstract="We report on the bandwidth performance of the normal metal TiN bolometer-mixer on top of an Al 2 O 3 substrate, which is capable to operate in a wide range of bath temperatures from 77 K -- 300 K. The choice of the combination TiN / Al 2 O 3 is related to an advanced heat transport between the film and the substrate in this pair and the sufficient temperature coefficient of resistance. The data were taken at 132.5 -- 145.5 GHz with two BWOs as a signal and an LO source. Measurements were taken on TiN films of different thickness starting from 20 nm down to 5 nm coupled into a spiral Au antenna, which improves matching of incoming radiation with the thin TiN fim. Our experiments demonstrate effective heat coupling from a TiN thin film to an Al 2 O 3 substrate (111) boosting gain bandwidth (GB) of TiN bolometer up to 6 GHz for 5 nm thin film. Current results indicate weak temperature dependence of GB on the bath temperature of the TiN bolometer. Theoretical estimations of GB performance meet with experimental data for 5 nm thin TiN films.",
optnote="exported from refbase (https://db.rplab.ru/refbase/show.php?record=1279), last updated on Sat, 08 May 2021 15:51:17 -0500",
opturl="https://www.nrao.edu/meetings/isstt/2019.shtml"
}