%0 Conference Proceedings
%T Bandwidth performance of a THz normal metal TiN bolometer-mixer
%A Tovpeko, N. A.
%A Trifonov, A. V.
%A Semenov, A. V.
%A Antipov, S. V.
%A Kaurova, N. S.
%A Titova, N. A.
%A Goltsman, G. N.
%S Proc. 30[super:th] Int. Symp. Space Terahertz Technol.
%D 2019
%F Tovpeko_etal2019
%O exported from refbase (https://db.rplab.ru/refbase/show.php?record=1279), last updated on Sat, 08 May 2021 15:51:17 -0500
%X We report on the bandwidth performance of the normal metal TiN bolometer-mixer on top of an Al 2 O 3 substrate, which is capable to operate in a wide range of bath temperatures from 77 K – 300 K. The choice of the combination TiN / Al 2 O 3 is related to an advanced heat transport between the film and the substrate in this pair and the sufficient temperature coefficient of resistance. The data were taken at 132.5 – 145.5 GHz with two BWOs as a signal and an LO source. Measurements were taken on TiN films of different thickness starting from 20 nm down to 5 nm coupled into a spiral Au antenna, which improves matching of incoming radiation with the thin TiN fim. Our experiments demonstrate effective heat coupling from a TiN thin film to an Al 2 O 3 substrate (111) boosting gain bandwidth (GB) of TiN bolometer up to 6 GHz for 5 nm thin film. Current results indicate weak temperature dependence of GB on the bath temperature of the TiN bolometer. Theoretical estimations of GB performance meet with experimental data for 5 nm thin TiN films.
%K TiN normal metal bolometer
%K NMB
%U https://www.nrao.edu/meetings/isstt/2019.shtml
%P 102-103