PT Unknown
AU Tovpeko, NA
   Trifonov, AV
   Semenov, AV
   Antipov, SV
   Kaurova, NS
   Titova, NA
   Goltsman, GN
TI Bandwidth performance of a THz normal metal TiN bolometer-mixer
SE Proc. 30[super:th] Int. Symp. Space Terahertz Technol.
PY 2019
BP 102
EP 103
DE TiN normal metal bolometer; NMB
AB We report on the bandwidth performance of the normal metal TiN bolometer-mixer on top of an Al 2 O 3 substrate, which is capable to operate in a wide range of bath temperatures from 77 K – 300 K. The choice of the combination TiN / Al 2 O 3 is related to an advanced heat transport between the film and the substrate in this pair and the sufficient temperature coefficient of resistance. The data were taken at 132.5 – 145.5 GHz with two BWOs as a signal and an LO source. Measurements were taken on TiN films of different thickness starting from 20 nm down to 5 nm coupled into a spiral Au antenna, which improves matching of incoming radiation with the thin TiN fim. Our experiments demonstrate effective heat coupling from a TiN thin film to an Al 2 O 3 substrate (111) boosting gain bandwidth (GB) of TiN bolometer up to 6 GHz for 5 nm thin film. Current results indicate weak temperature dependence of GB on the bath temperature of the TiN bolometer. Theoretical estimations of GB performance meet with experimental data for 5 nm thin TiN films.
ER