@InProceedings{Tretyakov_etal2019,
author="Tretyakov, I.
and Svyatodukh, S.
and Chumakova, A.
and Perepelitsa, A.
and Kaurova, N.
and Shurakov, A.
and Zilberley, T.
and Ryabchun, S.
and Smirnov, M.
and Ovchinnikov, O.
and Goltsman, G.",
title="Room temperature silicon detector for IR range coated with Ag$_{2}$S quantum dots",
booktitle="IRMMW-THz",
year="2019",
optkeywords="Ag2S quantum dots",
abstract="A silicon has been the chief technological semiconducting material of modern microelectronics and has had a strong influence on all aspects of society. Applications of Si-based optoelectronic devices are limited to the visible and near infrared ranges. The expansion of the Si absorption to shorter wavelengths of the infrared range is of considerable interest to optoelectronic applications. By creating impurity states in Si it is possible to cause sub-band gap photon absorption. Here, we present an elegant and effective technology of extending the photoresponse of towards the IR range. Our approach is based on the use of Ag 2 S quantum dots (QDs) planted on the surface of Si. The specific sensitivity of the Ag 2 S/Si heterostructure is 10 11 cm{\textsurd}HzW -1 at 1.55$\mu$m. Our findings open a path towards the future study and development of Si detectors for technological applications.",
optnote="exported from refbase (https://db.rplab.ru/refbase/show.php?record=1286), last updated on Sat, 08 May 2021 21:03:25 -0500",
isbn="978-1-5386-8285-2",
issn="2162-2035",
doi="10.1109/IRMMW-THz.2019.8874267",
opturl="https://doi.org/10.1109/IRMMW-THz.2019.8874267"
}