@Article{Finkel_etal2017,
author="Finkel, M.
and Thierschmann, H.
and Galatro, L.
and Katan, A. J.
and Thoen, D. J.
and de Visser, P. J.
and Spirito, M.
and Klapwijk, T. M.",
title="Performance of THz components based on microstrip PECVD SiN$_{x}$ technology",
journal="IEEE Trans. THz Sci. Technol.",
year="2017",
volume="7",
number="6",
pages="765--771",
optkeywords="transmission line measurements; power transmission lines; dielectrics; couplers; submillimeter wave circuits; coplanar waveguides; micromechanical devices",
abstract="We present a performance analysis of passive THz components based on Microstrip transmission lines with a 2-$\mu$mthin plasma-enhanced chemical vapor deposition grown silicon nitride (PECVD SiNX) dielectric layer. A set of thru-reflect-line calibration structures is used for basic transmission line characterizations. We obtain losses of 9 dB/mm at 300 GHz. Branchline hybrid couplers are realized that exhibit 2.5-dB insertion loss, 1-dB amplitude imbalance, and -26-dB isolation, in agreement with simulations. We use the measured center frequency to determine the dielectric constant of the PECVD SiN x , which yields 5.9. We estimate the wafer-to-wafer variations to be of the order of 1{\%}. Directional couplers are presented which exhibit -12-dB transmission to the coupled port and -26 dB to the isolated port. For transmission lines with 5-$\mu$m-thin silicon nitride (SiN x ), we observe losses below 4 dB/mm. The thin SiN x dielectric membrane makes the THz components compatible with scanning probe microscopy cantilevers allowing the application of this technology in on-chip circuits of a THz near-field microscope.",
optnote="exported from refbase (https://db.rplab.ru/refbase/show.php?record=1294), last updated on Sun, 09 May 2021 11:53:55 -0500",
issn="2156-342X",
doi="10.1109/TTHZ.2017.2759507",
opturl="http://ieeexplore.ieee.org/document/8080308/",
opturl="https://doi.org/10.1109/TTHZ.2017.2759507"
}