TY  - JOUR
AU  - Finkel, M.
AU  - Thierschmann, H.
AU  - Galatro, L.
AU  - Katan, A. J.
AU  - Thoen, D. J.
AU  - de Visser, P. J.
AU  - Spirito, M.
AU  - Klapwijk, T. M.
PY  - 2017
DA  - 2017//
TI  - Performance of THz components based on microstrip PECVD SiN[sub:x] technology
T2  - IEEE Trans. THz Sci. Technol.
JO  - IEEE Trans. THz Sci. Technol.
SP  - 765
EP  - 771
VL  - 7
IS  - 6
KW  - transmission line measurements
KW  - power transmission lines
KW  - dielectrics
KW  - couplers
KW  - submillimeter wave circuits
KW  - coplanar waveguides
KW  - micromechanical devices
AB  - We present a performance analysis of passive THz components based on Microstrip transmission lines with a 2-μmthin plasma-enhanced chemical vapor deposition grown silicon nitride (PECVD SiNX) dielectric layer. A set of thru-reflect-line calibration structures is used for basic transmission line characterizations. We obtain losses of 9 dB/mm at 300 GHz. Branchline hybrid couplers are realized that exhibit 2.5-dB insertion loss, 1-dB amplitude imbalance, and -26-dB isolation, in agreement with simulations. We use the measured center frequency to determine the dielectric constant of the PECVD SiN x , which yields 5.9. We estimate the wafer-to-wafer variations to be of the order of 1%. Directional couplers are presented which exhibit -12-dB transmission to the coupled port and -26 dB to the isolated port. For transmission lines with 5-μm-thin silicon nitride (SiN x ), we observe losses below 4 dB/mm. The thin SiN x dielectric membrane makes the THz components compatible with scanning probe microscopy cantilevers allowing the application of this technology in on-chip circuits of a THz near-field microscope.
SN  - 2156-342X
UR  - http://ieeexplore.ieee.org/document/8080308/
UR  - https://doi.org/10.1109/TTHZ.2017.2759507
DO  - 10.1109/TTHZ.2017.2759507
N1  - exported from refbase (https://db.rplab.ru/refbase/show.php?record=1294), last updated on Sun, 09 May 2021 11:53:55 -0500
ID  - Finkel_etal2017
ER  -