@InProceedings{Finkel_etal2016,
author="Finkel, M.
and Thierschmann, H. R.
and Galatro, L.
and Katan, A. J.
and Thoen, D. J.
and de Visser, P. J.
and Spirito, M.
and Klapwijk, T. M.",
title="Branchline and directional THz coupler based on PECVD SiNx-technology",
booktitle="41st IRMMW-THz",
year="2016",
optkeywords="microstrip; fixtures; coplanar waveguides; couplers; standards; probes; dielectrics",
abstract="A fabrication technology to realize THz microstrip lines and passive circuit components is developed and tested making use of a plasma-enhanced chemical vapor deposition grown silicon nitride (PECVD SiNx) dielectric membrane. We use 2 $\mu$m thick SiNx and 300 nm thick gold layers on sapphire substrates. We fabricate a set of structures for thru-reflect-line (TRL) calibration, with the reflection standard implemented as a short through the via. We find losses of 9.5 dB/mm at 300 GHz for a 50 Ohm line. For a branchline coupler we measure 2.5 dB insertion loss, 1 dB amplitude imbalance and 21 dB isolation. Good control over the THz lines parameters is proven by similar performance of a set of 5 structures. The directional couplers show -14 dB transmission to the coupled port, -24 dB to the isolated port and -25 dB in reflection. The SiNx membrane, used as a dielectric, is compatible with atomic force microscopy (AFM) cantilevers allowing the application of this technology to the development of a THz near-field microscope.",
optnote="exported from refbase (https://db.rplab.ru/refbase/show.php?record=1295), last updated on Sun, 09 May 2021 12:03:33 -0500",
isbn="978-1-4673-8485-8",
issn="2162-2035",
doi="10.1109/IRMMW-THz.2016.7758586",
opturl="https://doi.org/10.1109/IRMMW-THz.2016.7758586"
}