@Article{Kardakova_etal2015,
author="Kardakova, A. I.
and Coumou, P. C. J. J.
and Finkel, M. I.
and Morozov, D. V.
and An, P. P.
and Goltsman, G. N.
and Klapwijk, T. M.",
title="Electron--phonon energy relaxation time in thin strongly disordered titanium nitride films",
journal="IEEE Trans. Appl. Supercond.",
year="2015",
volume="25",
number="3",
pages="1--4",
optkeywords="TiN MKID",
abstract="We have measured the energy relaxation times from the electron bath to the phonon bath in strongly disordered TiN films grown by atomic layer deposition. The measured values of $\tau$ eph vary from 12 to 91 ns. Over a temperature range from 3.4 to 1.7 K, they follow T -3 temperature dependence, which are consistent with values of $\tau$ eph reported previously for sputtered TiN films. For the most disordered film, with an effective elastic mean free path of 0.35 nm, we find a faster relaxation and a stronger temperature dependence, which may be an additional indication of the influence of strong disorder on a superconductor.",
optnote="exported from refbase (https://db.rplab.ru/refbase/show.php?record=1296), last updated on Sun, 09 May 2021 12:11:43 -0500",
issn="1051-8223",
doi="10.1109/TASC.2014.2364516",
opturl="http://ieeexplore.ieee.org/document/6933930/",
opturl="https://doi.org/10.1109/TASC.2014.2364516"
}