%0 Journal Article
%T Electron–phonon energy relaxation time in thin strongly disordered titanium nitride films
%A Kardakova, A. I.
%A Coumou, P. C. J. J.
%A Finkel, M. I.
%A Morozov, D. V.
%A An, P. P.
%A Goltsman, G. N.
%A Klapwijk, T. M.
%J IEEE Trans. Appl. Supercond.
%D 2015
%V 25
%N 3
%@ 1051-8223
%F Kardakova_etal2015
%O exported from refbase (https://db.rplab.ru/refbase/show.php?record=1296), last updated on Sun, 09 May 2021 12:11:43 -0500
%X We have measured the energy relaxation times from the electron bath to the phonon bath in strongly disordered TiN films grown by atomic layer deposition. The measured values of τ eph vary from 12 to 91 ns. Over a temperature range from 3.4 to 1.7 K, they follow T -3 temperature dependence, which are consistent with values of τ eph reported previously for sputtered TiN films. For the most disordered film, with an effective elastic mean free path of 0.35 nm, we find a faster relaxation and a stronger temperature dependence, which may be an additional indication of the influence of strong disorder on a superconductor.
%K TiN MKID
%R 10.1109/TASC.2014.2364516
%U http://ieeexplore.ieee.org/document/6933930/
%U https://doi.org/10.1109/TASC.2014.2364516
%P 1-4