PT Journal
AU Kardakova, AI
   Coumou, PCJJ
   Finkel, MI
   Morozov, DV
   An, PP
   Goltsman, GN
   Klapwijk, TM
TI Electron–phonon energy relaxation time in thin strongly disordered titanium nitride films
SO IEEE Trans. Appl. Supercond.
JI IEEE Trans. Appl. Supercond.
PY 2015
BP 1
EP 4
VL 25
IS 3
DI 10.1109/TASC.2014.2364516
DE TiN MKID
AB We have measured the energy relaxation times from the electron bath to the phonon bath in strongly disordered TiN films grown by atomic layer deposition. The measured values of τ eph vary from 12 to 91 ns. Over a temperature range from 3.4 to 1.7 K, they follow T -3 temperature dependence, which are consistent with values of τ eph reported previously for sputtered TiN films. For the most disordered film, with an effective elastic mean free path of 0.35 nm, we find a faster relaxation and a stronger temperature dependence, which may be an additional indication of the influence of strong disorder on a superconductor.
ER