TY  - JOUR
AU  - Kardakova, A. I.
AU  - Coumou, P. C. J. J.
AU  - Finkel, M. I.
AU  - Morozov, D. V.
AU  - An, P. P.
AU  - Goltsman, G. N.
AU  - Klapwijk, T. M.
PY  - 2015
DA  - 2015//
TI  - Electron–phonon energy relaxation time in thin strongly disordered titanium nitride films
T2  - IEEE Trans. Appl. Supercond.
JO  - IEEE Trans. Appl. Supercond.
SP  - 1
EP  - 4
VL  - 25
IS  - 3
KW  - TiN MKID
AB  - We have measured the energy relaxation times from the electron bath to the phonon bath in strongly disordered TiN films grown by atomic layer deposition. The measured values of τ eph vary from 12 to 91 ns. Over a temperature range from 3.4 to 1.7 K, they follow T -3 temperature dependence, which are consistent with values of τ eph reported previously for sputtered TiN films. For the most disordered film, with an effective elastic mean free path of 0.35 nm, we find a faster relaxation and a stronger temperature dependence, which may be an additional indication of the influence of strong disorder on a superconductor.
SN  - 1051-8223
UR  - http://ieeexplore.ieee.org/document/6933930/
UR  - https://doi.org/10.1109/TASC.2014.2364516
DO  - 10.1109/TASC.2014.2364516
N1  - exported from refbase (https://db.rplab.ru/refbase/show.php?record=1296), last updated on Sun, 09 May 2021 12:11:43 -0500
ID  - Kardakova_etal2015
ER  -