@InProceedings{Matyushkin_etal2018,
author="Matyushkin, Y. E.
and Gayduchenko, I. A.
and Moskotin, M. V.
and Goltsman, G. N.
and Fedorov, G. E.
and Rybin, M. G.
and Obraztsova, E. D.",
title="Graphene-layer and graphene-nanoribbon FETs as THz detectors",
booktitle="J. Phys.: Conf. Ser.",
year="2018",
volume="1124",
pages="051054",
optkeywords="field-effect transistor; FET; monolayer graphene; graphene nanoribbons",
abstract="We report on detection of sub-THz radiation (129-430 GHz) using graphene based asymmetric field-effect transistor (FET) structures with different channel geometry: monolayer graphene, graphene nanoribbons. In all devices types we observed the similar trends of response on sub-THz radiation. The response fell with increasing frequency at room temperature, but increased with increasing frequency at 77 K. Our calculations show that the change in the trend of the frequency dependence at 77 K is associated with the appearance of plasma waves in the graphene channel. Unusual properties of p-n junctions in graphene are highlighted using devices of special geometry.",
optnote="exported from refbase (https://db.rplab.ru/refbase/show.php?record=1300), last updated on Sun, 09 May 2021 12:54:54 -0500",
issn="1742-6588",
doi="10.1088/1742-6596/1124/5/051054",
opturl="https://iopscience.iop.org/article/10.1088/1742-6596/1124/5/051054",
opturl="https://doi.org/10.1088/1742-6596/1124/5/051054"
}