PT Unknown
AU Matyushkin, YE
   Gayduchenko, IA
   Moskotin, MV
   Goltsman, GN
   Fedorov, GE
   Rybin, MG
   Obraztsova, ED
TI Graphene-layer and graphene-nanoribbon FETs as THz detectors
SE J. Phys.: Conf. Ser.
PY 2018
BP 051054
VL 1124
DI 10.1088/1742-6596/1124/5/051054
DE field-effect transistor; FET; monolayer graphene; graphene nanoribbons
AB We report on detection of sub-THz radiation (129-430 GHz) using graphene based asymmetric field-effect transistor (FET) structures with different channel geometry: monolayer graphene, graphene nanoribbons. In all devices types we observed the similar trends of response on sub-THz radiation. The response fell with increasing frequency at room temperature, but increased with increasing frequency at 77 K. Our calculations show that the change in the trend of the frequency dependence at 77 K is associated with the appearance of plasma waves in the graphene channel. Unusual properties of p-n junctions in graphene are highlighted using devices of special geometry.
ER