TY  - CONF
AU  - Matyushkin, Y. E.
AU  - Gayduchenko, I. A.
AU  - Moskotin, M. V.
AU  - Goltsman, G. N.
AU  - Fedorov, G. E.
AU  - Rybin, M. G.
AU  - Obraztsova, E. D.
PY  - 2018
DA  - 2018//
TI  - Graphene-layer and graphene-nanoribbon FETs as THz detectors
T2  - J. Phys.: Conf. Ser.
BT  - J. Phys.: Conf. Ser.
SP  - 051054
VL  - 1124
KW  - field-effect transistor
KW  - FET
KW  - monolayer graphene
KW  - graphene nanoribbons
AB  - We report on detection of sub-THz radiation (129-430 GHz) using graphene based asymmetric field-effect transistor (FET) structures with different channel geometry: monolayer graphene, graphene nanoribbons. In all devices types we observed the similar trends of response on sub-THz radiation. The response fell with increasing frequency at room temperature, but increased with increasing frequency at 77 K. Our calculations show that the change in the trend of the frequency dependence at 77 K is associated with the appearance of plasma waves in the graphene channel. Unusual properties of p-n junctions in graphene are highlighted using devices of special geometry.
SN  - 1742-6588
UR  - https://iopscience.iop.org/article/10.1088/1742-6596/1124/5/051054
UR  - https://doi.org/10.1088/1742-6596/1124/5/051054
DO  - 10.1088/1742-6596/1124/5/051054
N1  - exported from refbase (https://db.rplab.ru/refbase/show.php?record=1300), last updated on Sun, 09 May 2021 12:54:54 -0500
ID  - Matyushkin_etal2018
ER  -