%0 Conference Proceedings
%T Bolometric effect for detection of sub-THz radiation with devices based on carbon nanotubes
%A Moskotin, M. V.
%A Gayduchenko, I. A.
%A Goltsman, G. N.
%A Titova, N.
%A Voronov, B. M.
%A Fedorov, G. F.
%A Pyatkov, F.
%A Hennrich, F.
%S J. Phys.: Conf. Ser.
%D 2018
%V 1124
%@ 1742-6588
%F Moskotin_etal2018
%O exported from refbase (https://db.rplab.ru/refbase/show.php?record=1301), last updated on Sun, 09 May 2021 18:06:59 -0500
%X In this work we investigate the response on THz radiation of a FET device based on an individual carbon nanotube conductance channel. It was already shown, that the response of such devices can be either of diode rectification origin or of thermoelectric effect origin or of their combination. In this work we demonstrate that at 77K and 8K temperatures strong bolometric effect also makes a significant contribution to the response.
%K field-effect transistor
%K FET
%K carbon nanotube
%K CNT
%R 10.1088/1742-6596/1124/5/051050
%U https://iopscience.iop.org/article/10.1088/1742-6596/1124/5/051050
%U https://doi.org/10.1088/1742-6596/1124/5/051050
%P 051050 (1 to 5)