PT Unknown
AU Moskotin, MV
   Gayduchenko, IA
   Goltsman, GN
   Titova, N
   Voronov, BM
   Fedorov, GF
   Pyatkov, F
   Hennrich, F
TI Bolometric effect for detection of sub-THz radiation with devices based on carbon nanotubes
SE J. Phys.: Conf. Ser.
PY 2018
BP 051050 (1 to 5)
VL 1124
DI 10.1088/1742-6596/1124/5/051050
DE field-effect transistor; FET; carbon nanotube; CNT
AB In this work we investigate the response on THz radiation of a FET device based on an individual carbon nanotube conductance channel. It was already shown, that the response of such devices can be either of diode rectification origin or of thermoelectric effect origin or of their combination. In this work we demonstrate that at 77K and 8K temperatures strong bolometric effect also makes a significant contribution to the response.
ER