TY  - CONF
AU  - Moskotin, M. V.
AU  - Gayduchenko, I. A.
AU  - Goltsman, G. N.
AU  - Titova, N.
AU  - Voronov, B. M.
AU  - Fedorov, G. F.
AU  - Pyatkov, F.
AU  - Hennrich, F.
PY  - 2018
DA  - 2018//
TI  - Bolometric effect for detection of sub-THz radiation with devices based on carbon nanotubes
T2  - J. Phys.: Conf. Ser.
BT  - J. Phys.: Conf. Ser.
SP  - 051050 (1 to 5)
VL  - 1124
KW  - field-effect transistor
KW  - FET
KW  - carbon nanotube
KW  - CNT
AB  - In this work we investigate the response on THz radiation of a FET device based on an individual carbon nanotube conductance channel. It was already shown, that the response of such devices can be either of diode rectification origin or of thermoelectric effect origin or of their combination. In this work we demonstrate that at 77K and 8K temperatures strong bolometric effect also makes a significant contribution to the response.
SN  - 1742-6588
UR  - https://iopscience.iop.org/article/10.1088/1742-6596/1124/5/051050
UR  - https://doi.org/10.1088/1742-6596/1124/5/051050
DO  - 10.1088/1742-6596/1124/5/051050
N1  - exported from refbase (https://db.rplab.ru/refbase/show.php?record=1301), last updated on Sun, 09 May 2021 18:06:59 -0500
ID  - Moskotin_etal2018
ER  -