PT Journal
AU Sidorova, MV
   Kozorezov, AG
   Semenov, AV
   Korneeva, YP
   Mikhailov, MY
   Devizenko, AY
   Korneev, AA
   Chulkova, GM
   Goltsman, GN
TI Nonbolometric bottleneck in electron-phonon relaxation in ultrathin WSi films
SO Phys. Rev. B
JI Phys. Rev. B
PY 2018
BP 184512 (1 to 13)
VL 97
IS 18
DI 10.1103/PhysRevB.97.184512
DE WSi films; diffusion constant; SSPD; SNSPD
AB We developed the model of the internal phonon bottleneck to describe the energy exchange between the acoustically soft ultrathin metal film and acoustically rigid substrate. Discriminating phonons in the film into two groups, escaping and nonescaping, we show that electrons and nonescaping phonons may form a unified subsystem, which is cooled down only due to interactions with escaping phonons, either due to direct phonon conversion or indirect sequential interaction with an electronic system. Using an amplitude-modulated absorption of the sub-THz radiation technique, we studied electron-phonon relaxation in ultrathin disordered films of tungsten silicide. We found an experimental proof of the internal phonon bottleneck. The experiment and simulation based on the proposed model agree well, resulting in τe−ph∼140–190 ps at TC=3.4K, supporting the results of earlier measurements by independent techniques.
ER