PT Unknown
AU Tretyakov, I
   Kaurova, N
   Raybchun, S
   Goltsman, GN
   Silaev, AA
TI Technology for NbN HEB based multipixel matrix of THz range
SE EPJ Web Conf.
PY 2018
BP 05011
VL 195
DI 10.1051/epjconf/201819505011
DE NbN HEB
AB The influence of homogeneity disorder degree of the thin superconducting NbN film across of Si wafer on characteristics of the Hot Electron Bolometers (HEB) has been investigated. Our experiments have been carried out near the superconducting transition and far below it. The high homogeneity disorder degree of the NbN film has been achieved by preparing the Si substrate surface. The fabricated HEBs all have almost identical R (T) characteristics with a dispersion of Tc and the normal resistance R300 of not more than 0.15K and 2 Ω, respectively. The quality of the devises allows us to demonstrate clearly the influence of non-equilibrium processes in the S’SS’ system on the device performance. Our fabrication technology also allows creating multiplex heterodyne and direct detector matrices based the HEB devices.
ER