TY  - CONF
AU  - Tretyakov, I.
AU  - Kaurova, N.
AU  - Raybchun, S.
AU  - Goltsman, G. N.
AU  - Silaev, A. A.
PY  - 2018
DA  - 2018//
TI  - Technology for NbN HEB based multipixel matrix of THz range
T2  - EPJ Web Conf.
BT  - EPJ Web Conf.
SP  - 05011
VL  - 195
KW  - NbN HEB
AB  - The influence of homogeneity disorder degree of the thin superconducting NbN film across of Si wafer on characteristics of the Hot Electron Bolometers (HEB) has been investigated. Our experiments have been carried out near the superconducting transition and far below it. The high homogeneity disorder degree of the NbN film has been achieved by preparing the Si substrate surface. The fabricated HEBs all have almost identical R (T) characteristics with a dispersion of Tc and the normal resistance R300 of not more than 0.15K and 2 Ω, respectively. The quality of the devises allows us to demonstrate clearly the influence of non-equilibrium processes in the S’SS’ system on the device performance. Our fabrication technology also allows creating multiplex heterodyne and direct detector matrices based the HEB devices.
SN  - 2100-014X
UR  - https://www.epj-conferences.org/10.1051/epjconf/201819505011
UR  - https://doi.org/10.1051/epjconf/201819505011
DO  - 10.1051/epjconf/201819505011
N1  - exported from refbase (https://db.rplab.ru/refbase/show.php?record=1318), last updated on Mon, 10 May 2021 18:18:44 -0500
ID  - Tretyakov_etal2018
ER  -