@Article{Trifonov_etal2017,
author="Trifonov, A.
and Tong, C-Y E.
and Grimes, P.
and Lobanov, Y.
and Kaurova, N.
and Blundell, R.
and Goltsman, G.",
title="Development of a silicon membrane-based multipixel hot electron bolometer receiver",
journal="IEEE Trans. Appl. Supercond.",
year="2017",
volume="27",
number="4",
pages="1--5",
optkeywords="Multi-pixel; NbN HEB; silicon-on-insulator; horn array",
abstract="We report on the development of a multipixel hot electron bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 {\texttimes} 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin-film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 and 300 $\mu$m, respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, fed by a monolithic drilled smooth-walled horn array.",
optnote="exported from refbase (https://db.rplab.ru/refbase/show.php?record=1324), last updated on Mon, 10 May 2021 19:03:15 -0500",
issn="1051-8223",
doi="10.1109/TASC.2017.2665585",
opturl="http://ieeexplore.ieee.org/document/7845639/",
opturl="https://doi.org/10.1109/TASC.2017.2665585"
}