TY  - JOUR
AU  - Trifonov, A.
AU  - Tong, C-Y E.
AU  - Grimes, P.
AU  - Lobanov, Y.
AU  - Kaurova, N.
AU  - Blundell, R.
AU  - Goltsman, G.
PY  - 2017
DA  - 2017//
TI  - Development of a silicon membrane-based multipixel hot electron bolometer receiver
T2  - IEEE Trans. Appl. Supercond.
JO  - IEEE Trans. Appl. Supercond.
SP  - 1
EP  - 5
VL  - 27
IS  - 4
KW  - Multi-pixel
KW  - NbN HEB
KW  - silicon-on-insulator
KW  - horn array
AB  - We report on the development of a multipixel hot electron bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin-film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 and 300 μm, respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, fed by a monolithic drilled smooth-walled horn array.
SN  - 1051-8223
UR  - http://ieeexplore.ieee.org/document/7845639/
UR  - https://doi.org/10.1109/TASC.2017.2665585
DO  - 10.1109/TASC.2017.2665585
N1  - exported from refbase (https://db.rplab.ru/refbase/show.php?record=1324), last updated on Mon, 10 May 2021 19:03:15 -0500
ID  - Trifonov_etal2017
ER  -