@Misc{Sidorova_etal2018,
author="Sidorova, M.
and Semenov, A.
and Korneev, A.
and Chulkova, G.
and Korneeva, Y.
and Mikhailov, M.
and Devizenko, A.
and Kozorezov, A.
and Goltsman, G.",
title="Electron-phonon relaxation time in ultrathin tungsten silicon film",
year="2018",
optkeywords="WSi film",
abstract="Using amplitude-modulated absorption of sub-THz radiation (AMAR) method, we studied electron-phonon relaxation in thin disordered films of tungsten silicide. We found a response time {\textasciitilde} 800 ps at critical temperature Tc = 3.4 K, which scales as minus 3 in the temperature range from 1.8 to 3.4 K. We discuss mechanisms, which can result in a strong phonon bottle-neck effect in a few nanometers thick film and yield a substantial difference between the measured time, characterizing response at modulation frequency, and the inelastic electron-phonon relaxation time. We estimate the electron-phonon relaxation time to be in the range {\textasciitilde} 100-200 ps at 3.4 K.",
optnote="Duplicated as 1341",
optnote="exported from refbase (https://db.rplab.ru/refbase/show.php?record=1340), last updated on Tue, 01 Jun 2021 21:56:04 -0500",
opturl="https://arxiv.org/abs/1607.07321v1"
}