%0 Generic
%T Electron-phonon relaxation time in ultrathin tungsten silicon film
%A Sidorova, M.
%A Semenov, A.
%A Korneev, A.
%A Chulkova, G.
%A Korneeva, Y.
%A Mikhailov, M.
%A Devizenko, A.
%A Kozorezov, A.
%A Goltsman, G.
%D 2018
%F Sidorova_etal2018
%O Duplicated as 1341
%O exported from refbase (https://db.rplab.ru/refbase/show.php?record=1340), last updated on Tue, 01 Jun 2021 21:56:04 -0500
%X Using amplitude-modulated absorption of sub-THz radiation (AMAR) method, we studied electron-phonon relaxation in thin disordered films of tungsten silicide. We found a response time ~ 800 ps at critical temperature Tc = 3.4 K, which scales as minus 3 in the temperature range from 1.8 to 3.4 K. We discuss mechanisms, which can result in a strong phonon bottle-neck effect in a few nanometers thick film and yield a substantial difference between the measured time, characterizing response at modulation frequency, and the inelastic electron-phonon relaxation time. We estimate the electron-phonon relaxation time to be in the range ~ 100-200 ps at 3.4 K.
%K WSi film
%9 miscellaneous
%U https://arxiv.org/abs/1607.07321v1