PT Unknown
AU Sidorova, M
   Semenov, A
   Korneev, A
   Chulkova, G
   Korneeva, Y
   Mikhailov, M
   Devizenko, A
   Kozorezov, A
   Goltsman, G
TI Electron-phonon relaxation time in ultrathin tungsten silicon film
PY 2018
DE WSi film
AB Using amplitude-modulated absorption of sub-THz radiation (AMAR) method, we studied electron-phonon relaxation in thin disordered films of tungsten silicide. We found a response time ~ 800 ps at critical temperature Tc = 3.4 K, which scales as minus 3 in the temperature range from 1.8 to 3.4 K. We discuss mechanisms, which can result in a strong phonon bottle-neck effect in a few nanometers thick film and yield a substantial difference between the measured time, characterizing response at modulation frequency, and the inelastic electron-phonon relaxation time. We estimate the electron-phonon relaxation time to be in the range ~ 100-200 ps at 3.4 K.
ER