TY  - STD
AU  - Sidorova, M.
AU  - Semenov, A.
AU  - Korneev, A.
AU  - Chulkova, G.
AU  - Korneeva, Y.
AU  - Mikhailov, M.
AU  - Devizenko, A.
AU  - Kozorezov, A.
AU  - Goltsman, G.
PY  - 2018
DA  - 2018//
TI  - Electron-phonon relaxation time in ultrathin tungsten silicon film
KW  - WSi film
AB  - Using amplitude-modulated absorption of sub-THz radiation (AMAR) method, we studied electron-phonon relaxation in thin disordered films of tungsten silicide. We found a response time ~ 800 ps at critical temperature Tc = 3.4 K, which scales as minus 3 in the temperature range from 1.8 to 3.4 K. We discuss mechanisms, which can result in a strong phonon bottle-neck effect in a few nanometers thick film and yield a substantial difference between the measured time, characterizing response at modulation frequency, and the inelastic electron-phonon relaxation time. We estimate the electron-phonon relaxation time to be in the range ~ 100-200 ps at 3.4 K.
UR  - https://arxiv.org/abs/1607.07321v1
N1  - Duplicated as 1341
ID  - Sidorova_etal2018
ER  -