@InProceedings{Fedorov_etal2015,
author="Fedorov, G. E.
and Gaiduchenko, I. A.
and Golikov, A. D.
and Rybin, M. G.
and Obraztsova, E. D.
and Voronov, B. M.
and Coquillat, D.
and Diakonova, N.
and Knap, W.
and Goltsman, G. N.
and Samartsev, V. V.
and Vinogradov, E. A.
and Naumov, A. V.
and Karimullin, K. R.",
title="Response of graphene based gated nanodevices exposed to THz radiation",
booktitle="EPJ Web of Conferences",
year="2015",
volume="103",
pages="10003 (1 to 2)",
optkeywords="graphene field-effect transistor; FET",
abstract="In this work we report on the response of asymmetric graphene based devices to subterahertz and terahertz radiation. Our devices are made in a configuration of a field-effect transistor with conduction channel between the source and drain electrodes formed with a CVD-grown graphene. The radiation is coupled through a spiral antenna to source and top gate electrodes. Room temperature responsivity of our devices is close to the values that are attractive for commercial applications. Further optimization of the device configuration may result in appearance of novel terahertz radiation detectors.",
optnote="exported from refbase (https://db.rplab.ru/refbase/show.php?record=1350), last updated on Wed, 12 May 2021 18:52:29 -0500",
issn="2100-014X",
doi="10.1051/epjconf/201510310003",
opturl="http://www.epj-conferences.org/10.1051/epjconf/201510310003",
opturl="https://doi.org/10.1051/epjconf/201510310003"
}