PT Unknown
AU Fedorov, GE
   Gaiduchenko, IA
   Golikov, AD
   Rybin, MG
   Obraztsova, ED
   Voronov, BM
   Coquillat, D
   Diakonova, N
   Knap, W
   Goltsman, GN
   Samartsev, VV
   Vinogradov, EA
   Naumov, AV
   Karimullin, KR
TI Response of graphene based gated nanodevices exposed to THz radiation
SE EPJ Web of Conferences
PY 2015
BP 10003 (1 to 2)
VL 103
DI 10.1051/epjconf/201510310003
DE graphene field-effect transistor; FET
AB In this work we report on the response of asymmetric graphene based devices to subterahertz and terahertz radiation. Our devices are made in a configuration of a field-effect transistor with conduction channel between the source and drain electrodes formed with a CVD-grown graphene. The radiation is coupled through a spiral antenna to source and top gate electrodes. Room temperature responsivity of our devices is close to the values that are attractive for commercial applications. Further optimization of the device configuration may result in appearance of novel terahertz radiation detectors.
ER