TY  - CONF
AU  - Fedorov, G. E.
AU  - Gaiduchenko, I. A.
AU  - Golikov, A. D.
AU  - Rybin, M. G.
AU  - Obraztsova, E. D.
AU  - Voronov, B. M.
AU  - Coquillat, D.
AU  - Diakonova, N.
AU  - Knap, W.
AU  - Goltsman, G. N.
AU  - Samartsev, V. V.
AU  - Vinogradov, E. A.
AU  - Naumov, A. V.
AU  - Karimullin, K. R.
PY  - 2015
DA  - 2015//
TI  - Response of graphene based gated nanodevices exposed to THz radiation
T2  - EPJ Web of Conferences
BT  - EPJ Web of Conferences
SP  - 10003 (1 to 2)
VL  - 103
KW  - graphene field-effect transistor
KW  - FET
AB  - In this work we report on the response of asymmetric graphene based devices to subterahertz and terahertz radiation. Our devices are made in a configuration of a field-effect transistor with conduction channel between the source and drain electrodes formed with a CVD-grown graphene. The radiation is coupled through a spiral antenna to source and top gate electrodes. Room temperature responsivity of our devices is close to the values that are attractive for commercial applications. Further optimization of the device configuration may result in appearance of novel terahertz radiation detectors.
SN  - 2100-014X
UR  - http://www.epj-conferences.org/10.1051/epjconf/201510310003
UR  - https://doi.org/10.1051/epjconf/201510310003
DO  - 10.1051/epjconf/201510310003
N1  - exported from refbase (https://db.rplab.ru/refbase/show.php?record=1350), last updated on Wed, 12 May 2021 18:52:29 -0500
ID  - Fedorov_etal2015
ER  -