@InProceedings{Gao_etal2006,
author="Gao, J. R.
and Hajenius, M.
and Tichelaar, F. D.
and Voronov, B.
and Grishina, E.
and Klapwijk, T. M.
and Gol{\textquoteright}tsman, G.
and Zorman, C. A.",
title="Can NbN films on 3C-SiC/Si change the IF bandwidth of hot electron bolometer mixers?",
booktitle="Proc. 17$^{th}$ Int. Symp. Space Terahertz Technol.",
year="2006",
pages="187--189",
optkeywords="NbN HEB mixers",
abstract="We realized ultra thin NbN films sputtered grown on a 3C-SiC/Si substrate. The film with a thickness of 3.5-4.5 nm shows a 1{\textquoteright}, of 11.8 K, which is the highest I{\textquoteleft}, observed among ultra thin NbN films on different substrates. The high-resolution transmission electron microscopy (HRTEM) studies show that the film has a monocrystalline structure, confirming the epitaxial growth on the 3C-SiC. Based on a two-temperature model and input parameters from standard NbN films on Si, simulations predict that the new film can increase the IF bandwidth of a HEB mixer by about a factor of 2 in comparison to the standard films. In addition, we find standard NbN films on Si with a T c of 9.4 K have a thickness of around 5.5 nm, being thicker than expected (3.5 nm).",
optnote="exported from refbase (https://db.rplab.ru/refbase/show.php?record=1439), last updated on Mon, 24 May 2021 23:35:46 -0500",
opturl="https://www.nrao.edu/meetings/isstt/2006.shtml"
}