%0 Conference Proceedings
%T Can NbN films on 3C-SiC/Si change the IF bandwidth of hot electron bolometer mixers?
%A Gao, J. R.
%A Hajenius, M.
%A Tichelaar, F. D.
%A Voronov, B.
%A Grishina, E.
%A Klapwijk, T. M.
%A Gol'tsman, G.
%A Zorman, C. A.
%S Proc. 17[super:th] Int. Symp. Space Terahertz Technol.
%D 2006
%F Gao_etal2006
%O exported from refbase (https://db.rplab.ru/refbase/show.php?record=1439), last updated on Mon, 24 May 2021 23:35:46 -0500
%X We realized ultra thin NbN films sputtered grown on a 3C-SiC/Si substrate. The film with a thickness of 3.5-4.5 nm shows a 1', of 11.8 K, which is the highest I`, observed among ultra thin NbN films on different substrates. The high-resolution transmission electron microscopy (HRTEM) studies show that the film has a monocrystalline structure, confirming the epitaxial growth on the 3C-SiC. Based on a two-temperature model and input parameters from standard NbN films on Si, simulations predict that the new film can increase the IF bandwidth of a HEB mixer by about a factor of 2 in comparison to the standard films. In addition, we find standard NbN films on Si with a T c of 9.4 K have a thickness of around 5.5 nm, being thicker than expected (3.5 nm).
%K NbN HEB mixers
%U https://www.nrao.edu/meetings/isstt/2006.shtml
%P 187-189