PT Unknown
AU Gao, JR
   Hajenius, M
   Tichelaar, FD
   Voronov, B
   Grishina, E
   Klapwijk, TM
   Gol'tsman, G
   Zorman, CA
TI Can NbN films on 3C-SiC/Si change the IF bandwidth of hot electron bolometer mixers?
SE Proc. 17[super:th] Int. Symp. Space Terahertz Technol.
PY 2006
BP 187
EP 189
DE NbN HEB mixers
AB We realized ultra thin NbN films sputtered grown on a 3C-SiC/Si substrate. The film with a thickness of 3.5-4.5 nm shows a 1', of 11.8 K, which is the highest I`, observed among ultra thin NbN films on different substrates. The high-resolution transmission electron microscopy (HRTEM) studies show that the film has a monocrystalline structure, confirming the epitaxial growth on the 3C-SiC. Based on a two-temperature model and input parameters from standard NbN films on Si, simulations predict that the new film can increase the IF bandwidth of a HEB mixer by about a factor of 2 in comparison to the standard films. In addition, we find standard NbN films on Si with a T c of 9.4 K have a thickness of around 5.5 nm, being thicker than expected (3.5 nm).
ER