PT Unknown
AU Bryerton, E
   Percy, R
   Bass, R
   Schultz, J
   Oluleye, O
   Lichtenberger, A
   Ediss, GA
   Pan, SK
   Goltsman, GN
TI Receiver measurements of pHEB beam lead mixers on 3-μm silicon
SE Proc. 30th IRMMW / 13th THz
PY 2005
BP 271
EP 272
DI 10.1109/ICIMW.2005.1572513
AB We report on receiver noise measurement results of phonon-cooled HEB beam lead mixers on 3 μm thick silicon. This type of ultra-thin mixer chip with integrated beam leads allows easy assembly into a block and holds great promise for array integration. Receiver measurements from 600-720 GHz are presented with a minimum noise temperature of 500 K at 666 GHz. These results verify the mixer performance of the SOI processing techniques allowing for further design and integration of SOI pHEB mixers in receivers operating above 1 THz.
ER