@Article{Zhang_etal2003,
author="Zhang, J.
and Boiadjieva, N.
and Chulkova, G.
and Deslandes, H.
and Gol{\textquoteright}tsman, G. N.
and Korneev, A.
and Kouminov, P.
and Leibowitz, M.
and Lo, W.
and Malinsky, R.
and Okunev, O.
and Pearlman, A.
and Slysz, W.
and Smirnov, K.
and Tsao, C.
and Verevkin, A.
and Voronov, B.
and Wilsher, K.
and Sobolewski, R.",
title="Noninvasive CMOS circuit testing with NbN superconducting single-photon detectors",
journal="Electron. Lett.",
year="2003",
volume="39",
number="14",
pages="1086--1088",
optkeywords="NbN SSPD; SNSPD; applications",
abstract="The 3.5 nm thick-film, meander-structured NbN superconducting single-photon detectors have been implemented in the CMOS circuit-testing system based on the detection of near-infrared photon emission from switching transistors and have significantly improved the performance of the system. Photon emissions from both p- and n-MOS transistors have been observed.",
optnote="exported from refbase (https://db.rplab.ru/refbase/show.php?record=1512), last updated on Thu, 20 May 2021 18:37:40 -0500",
issn="0013-5194",
doi="10.1049/el:20030710",
opturl="https://digital-library.theiet.org/content/journals/10.1049/el_20030710",
opturl="https://doi.org/10.1049/el:20030710"
}