%0 Journal Article
%T Noninvasive CMOS circuit testing with NbN superconducting single-photon detectors
%A Zhang, J.
%A Boiadjieva, N.
%A Chulkova, G.
%A Deslandes, H.
%A Gol'tsman, G. N.
%A Korneev, A.
%A Kouminov, P.
%A Leibowitz, M.
%A Lo, W.
%A Malinsky, R.
%A Okunev, O.
%A Pearlman, A.
%A Slysz, W.
%A Smirnov, K.
%A Tsao, C.
%A Verevkin, A.
%A Voronov, B.
%A Wilsher, K.
%A Sobolewski, R.
%J Electron. Lett.
%D 2003
%V 39
%N 14
%@ 0013-5194
%F Zhang_etal2003
%O exported from refbase (https://db.rplab.ru/refbase/show.php?record=1512), last updated on Thu, 20 May 2021 18:37:40 -0500
%X The 3.5 nm thick-film, meander-structured NbN superconducting single-photon detectors have been implemented in the CMOS circuit-testing system based on the detection of near-infrared photon emission from switching transistors and have significantly improved the performance of the system. Photon emissions from both p- and n-MOS transistors have been observed.
%K NbN SSPD
%K SNSPD
%K applications
%R 10.1049/el:20030710
%U https://digital-library.theiet.org/content/journals/10.1049/el_20030710
%U https://doi.org/10.1049/el:20030710
%P 1086-1088