PT Journal
AU Zhang, J
   Boiadjieva, N
   Chulkova, G
   Deslandes, H
   Gol'tsman, GN
   Korneev, A
   Kouminov, P
   Leibowitz, M
   Lo, W
   Malinsky, R
   Okunev, O
   Pearlman, A
   Slysz, W
   Smirnov, K
   Tsao, C
   Verevkin, A
   Voronov, B
   Wilsher, K
   Sobolewski, R
TI Noninvasive CMOS circuit testing with NbN superconducting single-photon detectors
SO Electron. Lett.
JI Electron. Lett.
PY 2003
BP 1086
EP 1088
VL 39
IS 14
DI 10.1049/el:20030710
DE NbN SSPD; SNSPD; applications
AB The 3.5 nm thick-film, meander-structured NbN superconducting single-photon detectors have been implemented in the CMOS circuit-testing system based on the detection of near-infrared photon emission from switching transistors and have significantly improved the performance of the system. Photon emissions from both p- and n-MOS transistors have been observed.
ER