TY  - JOUR
AU  - Zhang, J.
AU  - Boiadjieva, N.
AU  - Chulkova, G.
AU  - Deslandes, H.
AU  - Gol'tsman, G. N.
AU  - Korneev, A.
AU  - Kouminov, P.
AU  - Leibowitz, M.
AU  - Lo, W.
AU  - Malinsky, R.
AU  - Okunev, O.
AU  - Pearlman, A.
AU  - Slysz, W.
AU  - Smirnov, K.
AU  - Tsao, C.
AU  - Verevkin, A.
AU  - Voronov, B.
AU  - Wilsher, K.
AU  - Sobolewski, R.
PY  - 2003
DA  - 2003//
TI  - Noninvasive CMOS circuit testing with NbN superconducting single-photon detectors
T2  - Electron. Lett.
JO  - Electron. Lett.
SP  - 1086
EP  - 1088
VL  - 39
IS  - 14
KW  - NbN SSPD
KW  - SNSPD
KW  - applications
AB  - The 3.5 nm thick-film, meander-structured NbN superconducting single-photon detectors have been implemented in the CMOS circuit-testing system based on the detection of near-infrared photon emission from switching transistors and have significantly improved the performance of the system. Photon emissions from both p- and n-MOS transistors have been observed.
SN  - 0013-5194
UR  - https://digital-library.theiet.org/content/journals/10.1049/el_20030710
UR  - https://doi.org/10.1049/el:20030710
DO  - 10.1049/el:20030710
N1  - exported from refbase (https://db.rplab.ru/refbase/show.php?record=1512), last updated on Thu, 20 May 2021 18:37:40 -0500
ID  - Zhang_etal2003
ER  -