@Article{Vakhtomin_etal2003,
author="Vakhtomin, Y. B.
and Finkel, M. I.
and Antipov, S. V.
and Smirnov, K. V.
and Kaurova, N. S.
and Drakinskii, V. N.
and Voronov, B. M.
and Gol{\textquoteright}tsman, G. N.",
title="The gain bandwidth of mixers based on the electron heating effect in an ultrathin NbN film on a Si substrate with a buffer MgO layer",
journal="J. of communications technol. {\&} electronics",
year="2003",
publisher="MAIK Nauka/Interperiodica, Birmingham, AL",
volume="48",
number="6",
pages="671--675",
optkeywords="NbN HEB mixers",
abstract="Measurements of the intermediate frequency band 900 GHz of mixers based on the electron heating effect (EHE) in 2-nm- and 3.5-nm-thick superconducting NbN films sputtered on MgO and Si substrates with buffer MgO layers are presented. A 2-nm-thick superconducting NbN film with a critical temperature of 9.2 K has been obtained for the first time using a buffer MgO layer.",
optnote="https://elibrary.ru/item.asp?id=17302119 (Полоса преобразования смесителей на эффекте разогрева электронов в ультратонких пленках NbN на подложках из Si с подслоем MgO)",
optnote="exported from refbase (https://db.rplab.ru/refbase/show.php?record=1522), last updated on Tue, 06 Jul 2021 13:44:17 -0500",
issn="1064-2269",
opturl="https://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=15001210"
}