%0 Journal Article
%T The gain bandwidth of mixers based on the electron heating effect in an ultrathin NbN film on a Si substrate with a buffer MgO layer
%A Vakhtomin, Y. B.
%A Finkel, M. I.
%A Antipov, S. V.
%A Smirnov, K. V.
%A Kaurova, N. S.
%A Drakinskii, V. N.
%A Voronov, B. M.
%A Gol’tsman, G. N.
%J J. of communications technol. & electronics
%D 2003
%V 48
%N 6
%I MAIK Nauka/Interperiodica, Birmingham, AL
%@ 1064-2269
%F Vakhtomin_etal2003
%O https://elibrary.ru/item.asp?id=17302119 (Полоса преобразования смесителей на эффекте разогрева электронов в ультратонких пленках NbN на подложках из Si с подслоем MgO)
%O exported from refbase (https://db.rplab.ru/refbase/show.php?record=1522), last updated on Tue, 06 Jul 2021 13:44:17 -0500
%X Measurements of the intermediate frequency band 900 GHz of mixers based on the electron heating effect (EHE) in 2-nm- and 3.5-nm-thick superconducting NbN films sputtered on MgO and Si substrates with buffer MgO layers are presented. A 2-nm-thick superconducting NbN film with a critical temperature of 9.2 K has been obtained for the first time using a buffer MgO layer.
%K NbN HEB mixers
%U https://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=15001210
%P 671-675