PT Journal
AU Vakhtomin, YB
   Finkel, MI
   Antipov, SV
   Smirnov, KV
   Kaurova, NS
   Drakinskii, VN
   Voronov, BM
   Gol’tsman, GN
TI The gain bandwidth of mixers based on the electron heating effect in an ultrathin NbN film on a Si substrate with a buffer MgO layer
SO J. of communications technol. & electronics
JI J. of communications technol. & electronics
PY 2003
BP 671
EP 675
VL 48
IS 6
DE NbN HEB mixers
AB Measurements of the intermediate frequency band 900 GHz of mixers based on the electron heating effect (EHE) in 2-nm- and 3.5-nm-thick superconducting NbN films sputtered on MgO and Si substrates with buffer MgO layers are presented. A 2-nm-thick superconducting NbN film with a critical temperature of 9.2 K has been obtained for the first time using a buffer MgO layer.
ER