TY  - JOUR
AU  - Vakhtomin, Y. B.
AU  - Finkel, M. I.
AU  - Antipov, S. V.
AU  - Smirnov, K. V.
AU  - Kaurova, N. S.
AU  - Drakinskii, V. N.
AU  - Voronov, B. M.
AU  - Gol’tsman, G. N.
PY  - 2003
DA  - 2003//
TI  - The gain bandwidth of mixers based on the electron heating effect in an ultrathin NbN film on a Si substrate with a buffer MgO layer
T2  - J. of communications technol. & electronics
JO  - J. of communications technol. & electronics
SP  - 671
EP  - 675
VL  - 48
IS  - 6
PB  - MAIK Nauka/Interperiodica, Birmingham, AL
KW  - NbN HEB mixers
AB  - Measurements of the intermediate frequency band 900 GHz of mixers based on the electron heating effect (EHE) in 2-nm- and 3.5-nm-thick superconducting NbN films sputtered on MgO and Si substrates with buffer MgO layers are presented. A 2-nm-thick superconducting NbN film with a critical temperature of 9.2 K has been obtained for the first time using a buffer MgO layer.
SN  - 1064-2269
UR  - https://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=15001210
N1  - https://elibrary.ru/item.asp?id=17302119 (Полоса преобразования смесителей на эффекте разогрева электронов в ультратонких пленках NbN на подложках из Si с подслоем MgO)
ID  - Vakhtomin_etal2003
ER  -