@Article{Smirnov_etal2000,
author="Smirnov, K. V.
and Ptitsina, N. G.
and Vakhtomin, Y. B.
and Verevkin, A. A.
and Gol{\textquoteright}tsman, G. N.
and Gershenzon, E. M.",
title="Energy relaxation of two-dimensional electrons in the quantum Hall effect regime",
journal="JETP Lett.",
year="2000",
volume="71",
number="1",
pages="31--34",
optkeywords="2DEG; GaAs/AlGaAs heterostructures",
abstract="The mm-wave spectroscopy with high temporal resolution is used to measure the energy relaxation times $\tau$e of 2D electrons in GaAs/AlGaAs heterostructures in magnetic fields B=0--4 T under quasi-equilibrium conditions at T=4.2 K. With increasing B, a considerable increase in $\tau$e from 0.9 to 25 ns is observed. For high B and low values of the filling factor $\nu$, the energy relaxation rate $\tau$ -1e oscillates. The depth of these oscillations and the positions of maxima depend on the filling factor $\nu$. For $\nu$>5, the relaxation rate $\tau$ -1e is maximum when the Fermi level lies in the region of the localized states between the Landau levels. For lower values of $\nu$, the relaxation rate is maximum at half-integer values of $\tau$ -1e when the Fermi level is coincident with the Landau level. The characteristic features of the dependence $\tau$ -1e (B) are explained by different contributions of the intralevel and interlevel electron-phonon transitions to the process of the energy relaxation of 2D electrons.",
optnote="http://jetpletters.ru/ps/899/article{\_}13838.shtml ({\textquoteleft}{\textquoteleft}Энергетическая релаксация двумерных электронов в области квантового эффекта Холла{\textquoteright}{\textquoteright})",
optnote="exported from refbase (https://db.rplab.ru/refbase/show.php?record=1559), last updated on Tue, 06 Jul 2021 17:07:21 -0500",
issn="0021-3640",
doi="10.1134/1.568271",
opturl="http://link.springer.com/10.1134/1.568271",
opturl="https://doi.org/10.1134/1.568271"
}