%0 Journal Article
%T Energy relaxation of two-dimensional electrons in the quantum Hall effect regime
%A Smirnov, K. V.
%A Ptitsina, N. G.
%A Vakhtomin, Y. B.
%A Verevkin, A. A.
%A Gol’tsman, G. N.
%A Gershenzon, E. M.
%J JETP Lett.
%D 2000
%V 71
%N 1
%@ 0021-3640
%F Smirnov_etal2000
%O http://jetpletters.ru/ps/899/article_13838.shtml ("Энергетическая релаксация двумерных электронов в области квантового эффекта Холла")
%O exported from refbase (https://db.rplab.ru/refbase/show.php?record=1559), last updated on Tue, 06 Jul 2021 17:07:21 -0500
%X The mm-wave spectroscopy with high temporal resolution is used to measure the energy relaxation times τe of 2D electrons in GaAs/AlGaAs heterostructures in magnetic fields B=0–4 T under quasi-equilibrium conditions at T=4.2 K. With increasing B, a considerable increase in τe from 0.9 to 25 ns is observed. For high B and low values of the filling factor ν, the energy relaxation rate τ −1e oscillates. The depth of these oscillations and the positions of maxima depend on the filling factor ν. For ν>5, the relaxation rate τ −1e is maximum when the Fermi level lies in the region of the localized states between the Landau levels. For lower values of ν, the relaxation rate is maximum at half-integer values of τ −1e when the Fermi level is coincident with the Landau level. The characteristic features of the dependence τ −1e (B) are explained by different contributions of the intralevel and interlevel electron-phonon transitions to the process of the energy relaxation of 2D electrons.
%K 2DEG
%K GaAs/AlGaAs heterostructures
%R 10.1134/1.568271
%U http://link.springer.com/10.1134/1.568271
%U https://doi.org/10.1134/1.568271
%P 31-34