TY  - JOUR
AU  - Smirnov, K. V.
AU  - Ptitsina, N. G.
AU  - Vakhtomin, Y. B.
AU  - Verevkin, A. A.
AU  - Gol’tsman, G. N.
AU  - Gershenzon, E. M.
PY  - 2000
DA  - 2000//
TI  - Energy relaxation of two-dimensional electrons in the quantum Hall effect regime
T2  - JETP Lett.
JO  - JETP Lett.
SP  - 31
EP  - 34
VL  - 71
IS  - 1
KW  - 2DEG
KW  - GaAs/AlGaAs heterostructures
AB  - The mm-wave spectroscopy with high temporal resolution is used to measure the energy relaxation times τe of 2D electrons in GaAs/AlGaAs heterostructures in magnetic fields B=0–4 T under quasi-equilibrium conditions at T=4.2 K. With increasing B, a considerable increase in τe from 0.9 to 25 ns is observed. For high B and low values of the filling factor ν, the energy relaxation rate τ −1e oscillates. The depth of these oscillations and the positions of maxima depend on the filling factor ν. For ν>5, the relaxation rate τ −1e is maximum when the Fermi level lies in the region of the localized states between the Landau levels. For lower values of ν, the relaxation rate is maximum at half-integer values of τ −1e when the Fermi level is coincident with the Landau level. The characteristic features of the dependence τ −1e (B) are explained by different contributions of the intralevel and interlevel electron-phonon transitions to the process of the energy relaxation of 2D electrons.
SN  - 0021-3640
UR  - http://link.springer.com/10.1134/1.568271
UR  - https://doi.org/10.1134/1.568271
DO  - 10.1134/1.568271
N1  - http://jetpletters.ru/ps/899/article_13838.shtml ("Энергетическая релаксация двумерных электронов в области квантового эффекта Холла")
ID  - Smirnov_etal2000
ER  -