%0 Conference Proceedings
%T Characterization of the electron energy relaxation process in NbN hot-electron devices
%A Il'in, K. S.
%A Gol'tsman, G. N.
%A Voronov, B. M.
%A Sobolewski, Roman
%S Proc. 10[super:th] Int. Symp. Space Terahertz Technol.
%D 1999
%F Ilin_etal1999
%O exported from refbase (https://db.rplab.ru/refbase/show.php?record=1576), last updated on Tue, 25 May 2021 14:32:03 -0500
%X We report on transient measurements of electron energy relaxation in NbN films with 300-fs time resolution. Using an electro-optic sampling technique, we have studied the photoresponse of 3.5-nm-thick NbN films deposited on sapphire substrates and exposed to 100-fs-wide optical pulses. Our experimental data analysis was based on the two-temperature model and has shown that in our films at the superconducting transition 10.5 K the inelastic electron-phonon scattering time was about (111}+-__.2) ps. This response time indicated that the maximum intermediate-frequency band of a NbN hot-electron phonon-cooled mixer should reach (16+41-3) GHz if one eliminates the bolometric phonon-heating effect. We have suggested several ways to increase the effectiveness of phonon cooling to achieve the above intrinsic value of the NbN mixer bandwidth.
%K HEB mixers
%K SSPD
%K SNSPD
%K NbN films
%K Nb films
%U https://www.nrao.edu/meetings/isstt/1999.shtml
%P 390-397