TY  - CONF
AU  - Il'in, K. S.
AU  - Gol'tsman, G. N.
AU  - Voronov, B. M.
AU  - Sobolewski, Roman
PY  - 1999
DA  - 1999//
TI  - Characterization of the electron energy relaxation process in NbN hot-electron devices
T2  - Proc. 10[super:th] Int. Symp. Space Terahertz Technol.
BT  - Proc. 10[super:th] Int. Symp. Space Terahertz Technol.
SP  - 390
EP  - 397
KW  - HEB mixers
KW  - SSPD
KW  - SNSPD
KW  - NbN films
KW  - Nb films
AB  - We report on transient measurements of electron energy relaxation in NbN films with 300-fs time resolution. Using an electro-optic sampling technique, we have studied the photoresponse of 3.5-nm-thick NbN films deposited on sapphire substrates and exposed to 100-fs-wide optical pulses. Our experimental data analysis was based on the two-temperature model and has shown that in our films at the superconducting transition 10.5 K the inelastic electron-phonon scattering time was about (111}+-__.2) ps. This response time indicated that the maximum intermediate-frequency band of a NbN hot-electron phonon-cooled mixer should reach (16+41-3) GHz if one eliminates the bolometric phonon-heating effect. We have suggested several ways to increase the effectiveness of phonon cooling to achieve the above intrinsic value of the NbN mixer bandwidth.
UR  - https://www.nrao.edu/meetings/isstt/1999.shtml
N1  - exported from refbase (https://db.rplab.ru/refbase/show.php?record=1576), last updated on Tue, 25 May 2021 14:32:03 -0500
ID  - Ilin_etal1999
ER  -