@InProceedings{Yagoubov_etal1998,
author="Yagoubov, P.
and Kroug, M.
and Merkel, H.
and Kollberg, E.
and Schubert, J.
and Hubers, H-W
and Schwaab, G.
and Gol{\textquoteright}tsman, G.
and Gershenzon, E.",
title="Performance of NbN phonon-cooled hot-electron bolometric mixer at Terahertz frequencies",
booktitle="Proc. 6-th Int. Conf. Terahertz Electron.",
year="1998",
pages="149--152",
optkeywords="NbN HEB mixers",
abstract="The performance of a NbN based phonon-cooled Hot Electron Bolometric (HEB) quasioptical mixer is investigated in the 0.65-3.12 THz frequency range. The device is made from a 3 nm thick NbN film on high resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are 0.2/spl times/2 /spl mu/m. The results of the DSB noire temperature are: 1300 K at 650 GHz, 4700 K at 2.5 TBz and 10000 K at 3.12 THz. The RF bandwidth of the receiver is at least 2.5 THz. The amount of LO power absorbed in the bolometer is about 100 nW. The mixer is linear to within 1 dB compression up to the signal level 10 dB below that of the LO. The intrinsic single sideband conversion gain is measured to be -9 dB, the total conversion gain -14 dB.",
optnote="exported from refbase (https://db.rplab.ru/refbase/show.php?record=1582), last updated on Tue, 25 May 2021 17:36:04 -0500",
doi="10.1109/THZ.1998.731689",
opturl="https://doi.org/10.1109/THZ.1998.731689"
}