PT Unknown
AU Yagoubov, P
   Kroug, M
   Merkel, H
   Kollberg, E
   Schubert, J
   Hubers, H
   Schwaab, G
   Gol’tsman, G
   Gershenzon, E
TI Performance of NbN phonon-cooled hot-electron bolometric mixer at Terahertz frequencies
SE Proc. 6-th Int. Conf. Terahertz Electron.
PY 1998
BP 149
EP 152
DI 10.1109/THZ.1998.731689
DE NbN HEB mixers
AB The performance of a NbN based phonon-cooled Hot Electron Bolometric (HEB) quasioptical mixer is investigated in the 0.65-3.12 THz frequency range. The device is made from a 3 nm thick NbN film on high resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are 0.2/spl times/2 /spl mu/m. The results of the DSB noire temperature are: 1300 K at 650 GHz, 4700 K at 2.5 TBz and 10000 K at 3.12 THz. The RF bandwidth of the receiver is at least 2.5 THz. The amount of LO power absorbed in the bolometer is about 100 nW. The mixer is linear to within 1 dB compression up to the signal level 10 dB below that of the LO. The intrinsic single sideband conversion gain is measured to be -9 dB, the total conversion gain -14 dB.
ER