@Article{Svechnikov_etal1997,
author="Svechnikov, S. I.
and Okunev, O. V.
and Yagoubov, P. A.
and Gol{\textquoteright}tsman, G. N.
and Voronov, B. M.
and Cherednichenko, S. I.
and Gershenzon, E. M.
and Gerecht, E.
and Musante, C. F.
and Wang, Z.
and Yngvesson, K. S.",
title="2.5 THz NbN hot electron mixer with integrated tapered slot antenna",
journal="IEEE Trans. Appl. Supercond.",
year="1997",
volume="7",
number="2",
pages="3548--3551",
optkeywords="NbN HEB mixers",
abstract="A Hot Electron Bolometer (HEB) mixer for 2.5 THz utilizing a NbN thin film device, integrated with a Broken Linearly Tapered Slot Antenna (BLTSA), has been fabricated and is presently being tested. The NbN HEB device and the antenna were fabricated on a SiO$_{2}$membrane. A 0.5 micrometer thick SiO$_{2}$layer was grown by rf magnetron reactive sputtering on a GaAs wafer. The HEB device (phonon-cooled type) was produced as several parallel strips, 1 micrometer wide, from an ultrathin NbN film 4-7 nm thick, that was deposited onto the SiO$_{2}$layer by dc magnetron reactive sputtering. The BLTSA was photoetched in a multilayer Ti-Au metallization. In order to strengthen the membrane, the front-side of the wafer was coated with a 5 micrometer thick polyimide layer just before the membrane formation. The last operation was anisotropic etching of the GaAs in a mixture of HNO$_{3}$and H$_{2}$O$_{2}$.",
optnote="exported from refbase (https://db.rplab.ru/refbase/show.php?record=1595), last updated on Tue, 25 May 2021 21:32:25 -0500",
issn="1051-8223",
doi="10.1109/77.622163",
opturl="http://ieeexplore.ieee.org/document/622163/",
opturl="https://doi.org/10.1109/77.622163"
}