%0 Journal Article %T 2.5 THz NbN hot electron mixer with integrated tapered slot antenna %A Svechnikov, S. I. %A Okunev, O. V. %A Yagoubov, P. A. %A Gol'tsman, G. N. %A Voronov, B. M. %A Cherednichenko, S. I. %A Gershenzon, E. M. %A Gerecht, E. %A Musante, C. F. %A Wang, Z. %A Yngvesson, K. S. %J IEEE Trans. Appl. Supercond. %D 1997 %V 7 %N 2 %@ 1051-8223 %F Svechnikov_etal1997 %O exported from refbase (https://db.rplab.ru/refbase/show.php?record=1595), last updated on Tue, 25 May 2021 21:32:25 -0500 %X A Hot Electron Bolometer (HEB) mixer for 2.5 THz utilizing a NbN thin film device, integrated with a Broken Linearly Tapered Slot Antenna (BLTSA), has been fabricated and is presently being tested. The NbN HEB device and the antenna were fabricated on a SiO[sub:2]membrane. A 0.5 micrometer thick SiO[sub:2]layer was grown by rf magnetron reactive sputtering on a GaAs wafer. The HEB device (phonon-cooled type) was produced as several parallel strips, 1 micrometer wide, from an ultrathin NbN film 4-7 nm thick, that was deposited onto the SiO[sub:2]layer by dc magnetron reactive sputtering. The BLTSA was photoetched in a multilayer Ti-Au metallization. In order to strengthen the membrane, the front-side of the wafer was coated with a 5 micrometer thick polyimide layer just before the membrane formation. The last operation was anisotropic etching of the GaAs in a mixture of HNO[sub:3]and H[sub:2]O[sub:2]. %K NbN HEB mixers %R 10.1109/77.622163 %U http://ieeexplore.ieee.org/document/622163/ %U https://doi.org/10.1109/77.622163 %P 3548-3551